In 2 vols.
|Statement||David K. Brice.|
|Contributions||Brice, David Kenneth.|
|The Physical Object|
|Number of Pages||590|
Book Review: Ion implantation range and energy deposition distributions. D.K. BRICE, Vol. 1, High incident ion energies (IFI/Plenum, New York, Washington, London. Brice D.K. () Theory of the Spatial Distributions of Ion Range and Energy Deposition. In: Crowder B.L. (eds) Ion Implantation in Semiconductors and Other Materials. The IBM Research Symposia by: 3. Brice D.K. (): Ion implantation depth distributions: Energy deposition into atomic processes and ion locations. Appl Phys L – Google Scholar Brice D.K. (): Heavy particle range and energy deposition distributions in : Peter Sigmund. , Ion implantation range and energy deposition distributions / David K. Brice Plenum Press New York Wikipedia Citation Please see Wikipedia's template documentation for further citation fields that may be required.
A useful method of calculating the energy/unit depth deposited in atomic processes by energetic ions in solids is presented. The calculated energy density is shown to correlate well with previous Monte Carlo calculations of the vacancy concentration resulting from ion bombardment and recent experimental measurements of the depth distribution of ion Cited by: The FORTRAN codes COREL, RASE4 and DAMG2 can be used to calculate quantities associated with ion implantation range and energy deposition distributions within an amorphous target, or for ions incident far from low index directions and planes in crystalline targets. The basic theory behind these routines is by: Ion implantation is a process in which ions of a material are accelerated by an electrical field to impact a solid. If the ions differ in composition from the target, namely, the specimen to be implanted, they will alter the elemental composition of the target and possibly change the physical, chemical, and/or electrical properties of the specimen. In particular, the use of energetic ions. Advantages of Ion Implantation: 1.) Very precise control of the dose 2.) Independent control of impurity depth and dose 3.) Very fast (1 12" wafer can take as little as 25 seconds for a moderate dose) 4.) Can perform retrograde profiles that peak at File Size: 1MB.
Jiang Binyao and Dai Renzi: Low energy ion implantation in compound materials References ' K B Winterbon, Ion Implantation Range and Energy Deposition Distributions. Plenum Press, London. z J Lindhard, V Nielsen, M Scharff, Mat Fys Medd Dan Vid Selsk, 36, 10 ().Author: Jiang Binyao, Dai Renzi. Abstract: An ultra high vacuum, low energy ion implanter was used in conjunction with a range of analytical techniques to study the range and damage distributions of B/sup +/ ions implanted at normal incidence into Si() samples held at room temperature. Samples were implanted over a dose range from 1E14 ions/cm/sup 2/ with and without a surface oxide layer and those Cited by: 4. PDF | This chapter introduces the basic equations for range and energy profiles. Several range concepts such as vector range, projected and lateral | Find, read and cite all the research you. Figure 2. Welding of carbon nanotubes by keV ion implantation . Recently, a low-energy FIB system has been developed for controlled three-dimensional (3D) micromachining and fabricates ultra-modern micro and nanodevices used in different applications .Either this system can be used for precise doping in nanoscale regime or implant in few atoms in biological samples for Author: Ishaq Ahmad, Waheed Akram.